LED module and manufacturing method thereof

ABSTRACT

There is provided a manufacturing method of an LED module including: forming an insulating film on a substrate; forming a first ground pad and a second ground pad separated from each other on the insulating film; forming a first division film that fills a space between the first and second ground pads, a second division film deposited on a surface of the first ground pad, and a third division film deposited on a surface of the second ground pad; forming a first partition layer of a predetermined height on each of the division films; sputtering seed metal to the substrate on which the first partition layer is formed; forming a second partition layer of a predetermined height on the first partition layer; forming a first mirror connected with the first ground pad and a second mirror connected with the second ground pad by performing a metal plating process to the substrate on which the second partition layer is formed; removing the first and second partition layers; connecting a zener diode to the first mirror and connecting an LED to the second mirror; and depositing a fluorescent material so as to fill a space formed by the first mirror and the second mirror.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a National Phase application filed under 35 USC 371of PCT International Application No. PCT/KR2011/001901 with anInternational Filing Date of Mar. 18, 2011, which claims under 35 U.S.C.§119(a) the benefit of Korean Application No. 10-2010-0024862, filedMar. 19, 2010, the entire contents of which are incorporated herein byreference.

FIELD OF THE INVENTION

The present disclosure relates to an LED module and a method ofmanufacturing the same.

BACKGROUND OF THE INVENTION

Conventionally, in a general method of manufacturing an LED module, aseparate LED element manufactured by assembling an LED element in a leadframe-shaped package and coating the LED element by a fluorescentmaterial is installed on a surface of a PCB substrate to manufacture amodule for illumination.

However, as for the LED element manufactured in accordance with thismethod, a heating property of the LED element is deteriorated and aluminous efficiency becomes decreased, and it is limited to obtainbrightness of a conventional light bulb with restriction on a size, andalso, cost of the LED element cannot be reduced.

In order to overcome such problems, there has been suggested a chip onboard (COB) method in which a metal core PCB (MCPCB) substrate is usedwithout a package and a LED is directly assembled in the MCPCBsubstrate.

The MCPCB has a high thermal conductivity but a material thereof isexpensive. For mass production of the MCPCB, investment in facilitiessuch as a specially designed facility for mass production needs to befollowed. Further, in manufacturing the MCPCB, it is difficult toperform a micro process with a size of about 50 um or less. Therefore,it has been deemed that the COB method has a low efficiency inmanufacturing a LED module for illumination and the MCPCB is costly andinappropriate for a module for illumination.

Although there has been a research on a high-efficiency LED single chipcapable of improving luminosity of an element, such a chip is expensiveand a size thereof cannot be reduced since a specially designed packageis needed to improve a heat emitting property thereof and also, cost ofassembly is very high.

Accordingly, a more efficient manufacturing method of an LED module isdemanded.

Some embodiments of the present disclosure provide an LED module and amethod of manufacturing the LED module capable of improving a luminousefficiency of an LED element by improving a heat emitting propertythereof when a high-luminance LED module is manufactured and capable ofmanufacturing a small-sized high-luminance LED module at low cost byforming a low-luminance LED into a module.

Further, some embodiments of the present disclosure provide an LEDmodule and a method of manufacturing the LED module capable of improvinga light emitting property of each LED element by installing a reflectingplate in each element and capable of manufacturing modules in variousshapes, which makes it possible to manufacture a high-luminance LED forillumination having various functions.

Furthermore, some embodiments of the present disclosure provide an LEDmodule and a method of manufacturing the LED module capable ofconsiderably reducing a defect rate of a module and production cost perunit by using a semiconductor process that makes it easy to massproduce.

BRIEF SUMMARY OF THE INVENTION

In accordance with a first embodiment of the present invention, there isprovided a manufacturing method of an LED module including: forming aninsulating film on a substrate; forming a first ground pad and a secondground pad separated from each other on the insulating film; forming afirst division film that fills a space between the first and secondground pads, a second division film deposited on a surface of the firstground pad, and a third division film deposited on a surface of thesecond ground pad; forming a first partition layer of a predeterminedheight on each of the division films; sputtering seed metal to thesubstrate on which the first partition layer is formed; forming a secondpartition layer of a predetermined height on the first partition layer;forming a first mirror connected with the first ground pad and a secondmirror connected with the second ground pad by performing a metalplating process to the substrate on which the second partition layer isformed; removing the first and second partition layers; connecting azener diode to the first mirror and connecting an LED to the secondmirror; and depositing a fluorescent material so as to fill a spaceformed by the first mirror and the second mirror.

In accordance with a second embodiment of the present invention, thereis provided a manufacturing method of an LED module including: insertinga zener diode into a substrate; forming an insulating film on thesubstrate; forming a first ground pad and a second ground pad separatedfrom each other on the insulating film; forming a first division filmthat fills a space between the first and second ground pads, a seconddivision film deposited on a surface of the first ground pad, and athird division film deposited on a surface of the second ground pad;forming a first partition layer of a predetermined height on each of thedivision films; sputtering seed metal to the substrate on which thefirst partition layer is formed; forming a second partition layer of apredetermined height on the first partition layer; forming a firstmirror connected with the first ground pad and a second mirror connectedwith the second ground pad by performing a metal plating process to thesubstrate on which the second partition layer is formed; removing thefirst and second partition layers; connecting an LED to the secondmirror; and depositing a fluorescent material so as to fill a spaceformed by the first mirror and the second mirror.

In accordance with a third embodiment of the present invention, there isprovided an LED module including: a first ground pad and a second groundpad separated from each other on a substrate on which an insulating filmis formed; a first mirror connected with a surface of the first groundpad; a second mirror connected with a surface of the second ground pad;a zener diode connected with the first mirror; an LED positioned on apartial surface of the second mirror; and a fluorescent material formedon the zener diode and the LED, wherein the other surface of the firstmirror and the other surface of the second mirror face each other.

In view of the foregoing, it is possible to improve a heat emittingproperty when a high-luminance LED module is manufactured and possibleto manufacture a small-sized high-luminance LED module at low cost byforming a low-luminance LED into a module.

Further, in view of the foregoing, it is possible to improve a lightemitting property of each LED element by installing a reflecting platein each element and possible to manufacture modules in various shapes,which makes it possible to manufacture a high-luminance LED forillumination having various functions.

Furthermore, in view of the foregoing, it is possible to considerablyreduce a defect rate of a module and production cost per unit by using asemiconductor process which makes it easy to mass produce.

BRIEF DESCRIPTION OF THE DRAWINGS

Non-limiting and non-exhaustive embodiments will be described inconjunction with the accompanying drawings. Understanding that thesedrawings depict only several embodiments in accordance with thedisclosure and are, therefore, not to be intended to limit its scope,the disclosure will be described with specificity and detail through useof the accompanying drawings, in which:

FIGS. 1 a to 1 h are diagrams illustrating a manufacturing method of anLED module in accordance with an embodiment of the present disclosure;

FIG. 2 is a cross-sectional view of an LED module in accordance with anembodiment of the present disclosure;

FIGS. 3 a to 3 c are diagrams illustrating a manufacturing method of anLED module in accordance with another embodiment of the presentdisclosure; and

FIG. 4 is a flowchart of a manufacturing method of an LED module inaccordance with an embodiment of the present disclosure.

DETAILED DESCRIPTION OF THE INVENTION

Hereinafter, embodiments of the present invention will be described indetail with reference to the accompanying drawings so that the presentinvention may be readily implemented by those skilled in the art.However, it is to be noted that the present invention is not limited tothe embodiments but can be realized in various other ways. In thedrawings, parts irrelevant to the description are omitted for thesimplicity of explanation, and like reference numerals denote like partsthrough the whole document.

Through the whole document, the term “connected to” or “coupled to” thatis used to designate a connection or coupling of one element to anotherelement includes both a case that an element is “directly connected orcoupled to” another element and a case that an element is“electronically connected or coupled to” another element via stillanother element. Further, the term “comprises or includes” and/or“comprising or including” used in the document means that one or moreother components, steps, operation and/or existence or addition ofelements are not excluded in addition to the described components,steps, operation and/or elements.

FIGS. 1 a to 1 h are diagrams illustrating a manufacturing method of anLED module in accordance with an embodiment of the present disclosure.

An LED module in accordance with an embodiment of the present disclosureincludes a first ground pad 142 and a second ground pad 144 which areseparately formed on a substrate 110 on which an insulating film 120 isformed, a first mirror 182 of which a surface is connected with thefirst ground pad 142, a second mirror 184 of which a surface isconnected with the second ground pad 144, a zener diode 191 connectedwith the first mirror 182, an LED 192 positioned on a partial surface ofthe second mirror 184, and a fluorescent material 194 formed on thezener diode 191 and the LED 192, and the other surface of the firstmirror 182 and the other surface of the second mirror 184 may face eachother. Hereinafter, a manufacturing method of the LED module will beexplained in more detail.

Above all, as depicted in FIG. 1 a, the insulating film 120 is formed onthe substrate 110. To be specific, Al metal is deposited on the Sisubstrate 110 and an anodic aluminum oxide (AAO) layer having nano poresof 5 nm or less is formed by anodic oxidation and then, a silicon oxide(SiO₂) layer is deposited by using a plasma chemical vapor depositionapparatus to manufacture the insulating film 120 for a LED module.Details of the process of manufacturing the insulating film 120 may befound in prior art (Korean Patent No. 10-0899894) of the presentapplicant.

Thereafter, as depicted in FIG. 1 b, a ground pad 140 is formed on theinsulating film 120 and includes the first ground pad 142 and the secondground pad 144 which are separated from each other. Here, seed metal maybe sputtered to the insulating film 120 and a photo process and a metalplating process using a photoresist layer 130 for manufacturing thefirst ground pad 142 and the second ground pad 144 may be performed, sothat the first ground pad 142 and the second ground pad 144 may beformed.

To be more specific, Ti or Au as seed metal for electroplating issputtered and coated with a photosensitive film and a pattern formanufacturing a ground pad is formed by a photo process. Then, a groundpad is manufactured with Cu or Au by electroplating.

Subsequently, as depicted in FIG. 1 c, a division film 150 is formed andincludes a first division film 151 configured to fill a gap between theground pads 142 and 144, a second division film 152 configured to belayered on a surface of the first ground pad 142, and a third divisionfilm 153 configured to be layered on a surface of the second ground pad144.

Here, the first division film 151 to the third division film 153 may beformed by coating the first ground pad 142 and the second ground pad 144with a polymer.

Then, as depicted in FIG. 1 d, a first partition layer 160 of apredetermined height is formed on the division film 150. Here, the firstpartition layer 160 may be formed by layering a first photoresist layeron the substrate 110 on which the division film 150 is formed andetching the first photoresist layer such that a part of the first andsecond ground pads 142 and 144 is exposed.

Thereafter, as depicted in FIG. 1 e, seed metal 162 is sputtered to thesubstrate 110 on which the first partition layer 160 is formed.

Further, as depicted in FIG. 1 f, a second partition layer 170 of apredetermined height is formed on the first partition layer 160. To bespecific, a second photoresist layer is layered on the substrate 110 towhich a sputtering process is performed and the second photoresist layeris etched such that a part of the first and second ground pads 142 and144 is exposed and an entire upper surface 164 of the first partitionlayer 160 formed on the first division film 151 is covered by the secondphotoresist layer.

Here, the second partition layer 170 may be formed such that the entireupper surface 164 of the first partition layer 160 formed on the firstdivision film 151 is covered by the second partition layer 170. Further,the second partition layer 170 may be formed so as to expose a part ofupper surfaces 166 and 168 of the first partition layers 160 formed onthe second and third division films 152 and 153, respectively, by thesecond partition layer 170. With this configuration, it is possible toprevent a mirror 180 from being formed around the first partition layer160 formed on the first division film 151.

Subsequently, as depicted in FIG. 1 g, by performing a metal platingprocess to the substrate 110 on which the second partition layer 170 isformed, a first mirror 182 connected with the first ground pad 142 and asecond mirror 184 connected with the second ground pad 144 are formed.Here, the first mirror 182 and the second mirror 184 may be formed byperforming an electroplating process to the substrate 110, on which thesecond partition layer 170 is formed, with Ni, Su, Cu, Au and Ag.

Thus, as depicted in the drawing, a structure of the mirror 180 mayinclude the first partition layer 160, the seed metal sputtered to thefirst partition layer 160, and the second partition layer 170 thatcovers a part of the sputtered seed metal.

Then, as depicted in FIG. 1 h, the first partition layer 160 and thesecond partition layer 170 are removed.

Thereafter, the zener diode 191 is connected with the first mirror 182and the LED 192 is connected with the second mirror 184. Further, Aubonding wires 193 are installed for electric wiring and the fluorescentmaterial 194 is deposited so as to fill a space formed by the firstmirror 182 and the second mirror 184.

FIG. 2 is a cross-sectional view of an LED module manufactured by theprocess depicted in FIGS. 1 a to 1 h in accordance with an embodiment ofthe present disclosure.

As depicted in FIG. 2, with the LED module manufactured by theabove-described process, it is possible to improve a light emittingproperty by installing a reflecting plate in each LED element andpossible to manufacture modules in various shapes, which makes itpossible to manufacture a high-luminance LED for illumination havingvarious functions.

Further, it is possible to considerably reduce a defect rate of a moduleand production cost per unit by using a semiconductor process that makesit easy to mass produce.

Furthermore, it is possible to assemble LEDs having various color ranksin a single module, which makes it possible to manufacture a sensitivelighting apparatus using an LED.

FIGS. 3 a to 3 c are diagrams illustrating a manufacturing method of anLED module in accordance with another embodiment of the presentdisclosure.

As depicted in FIG. 3 a, before an insulating film 120 is formed on asubstrate 110, a zener diode 191 may be inserted into the substrate 110.Here, the inserted zener diode 191 may be positioned under a firstmirror 182. If the zener diode 191 is inserted beforehand, a process maybe more simplified and a small-sized LED module can be manufactured.

As depicted in FIG. 3 b, a driver IC (Integrated Circuit) 120 may beinstalled on the insulating film 120 of the LED module. That is, thebare driver IC 200 of the LED may be installed on the manufactured LEDmodule and bonding wires may be installed, so that integration densityof the module can be increased.

As depicted in FIG. 3 c, an integrated passive device 210 may beintegrated on the insulating film 120.

Thus, it is possible to improve a luminous efficiency of the LED elementby improving a heat emitting property thereof when a high-luminance LEDmodule is manufactured and possible to manufacture a small-sizedhigh-luminance LED module at low cost by forming a low-luminance LEDinto a module.

FIG. 4 is a flowchart of a manufacturing method of an LED module inaccordance with an embodiment of the present disclosure.

First of all, an insulating film 120 is formed on a substrate 110(S101). Here, an aluminum oxide layer may be formed on the substrate 110and a silicon oxide (SiO₂) layer may be deposited on the aluminum oxidelayer, so that the insulating film 120 may be formed. Further, inanother embodiment, a zener diode 191 may be inserted prior to this stepS101.

Then, a first ground pad 142 and a second ground pad 144 which areseparated from each other are formed on the insulating film 120 (S111).Here, seed metal may be sputtered seed metal may be sputtered to theinsulating film 120 and a photo process and a metal plating process maybe performed to manufacture the first ground pad 142 and the secondground pad 144. As the seed metal, Ti or Au may be used and Cu or Au maybe used in the metal plating process.

Subsequently, a first division film 151 configured to fill a gap betweenthe ground pads, a second division film 152 configured to be layered ona surface of the first ground pad 142, and a third division film 153configured to be layered on a surface of the second ground pad 144 areformed (S121). Here, the first division film 151 to the third divisionfilm 153 may be formed by coating the first ground pad 142 and thesecond ground pad 144 with a polymer.

Then, a first partition layer 160 of a predetermined height is formed oneach division film (S131). Here, the first partition layer 160 may beformed by layering a first photoresist layer on the substrate 110 onwhich the division film is formed and etching the first photoresistlayer such that a part of the first and second ground pads 142 and 144is exposed.

Thereafter, seed metal is sputtered to the substrate 110 on which thefirst partition layer 160 is formed (S141).

Further, a second partition layer 170 of a predetermined height isformed on the first partition layer 160 (S151). Here, the secondpartition layer 170 may be formed such that an entire upper surface 164of the first partition layer 160 formed on the first division film 151is covered by the second partition layer 170. Further, the secondpartition layer 170 may be formed so as to expose a part of uppersurfaces 166 and 168 of the first partition layers 160 formed on thesecond and third division films 152 and 153, respectively, by the secondpartition layer 170.

Subsequently, by performing a metal plating process to the substrate 110on which the second partition layer 170 is formed, a first mirror 182connected with the first ground pad 142 and a second mirror 184connected with the second ground pad 144 are formed (S161). The firstmirror 182 and the second mirror 184 may be formed by performing anelectroplating process to the substrate 110, on which the secondpartition layer 170 is formed, with Ni, Su, Cu, Au and Ag.

Then, the first partition layer 160 and the second partition layer 170are removed (S171).

Thereafter, the zener diode 191 is connected with the first mirror 182and an LED 192 is connected with the second mirror 184 (S181).

Subsequently, a fluorescent material 194 is deposited so as to fill aspace formed by the first mirror 182 and the second mirror 184 (S191).

Meanwhile, in another embodiment, a driver IC 200 and an integratedpassive device 210 may be integrated together on an insulating film 120of an LED module.

The above description of the present invention is provided for thepurpose of illustration, and it would be understood by those skilled inthe art that various changes and modifications may be made withoutchanging technical conception and essential features of the presentinvention. Thus, it is clear that the above-described embodiments areillustrative in all aspects and do not limit the present invention. Forexample, each component described to be of a single type can beimplemented in a distributed manner. Likewise, components described tobe distributed can be implemented in a combined manner.

The scope of the present invention is defined by the following claimsrather than by the detailed description of the embodiment. It shall beunderstood that all modifications and embodiments conceived from themeaning and scope of the claims and their equivalents are included inthe scope of the present invention.

What is claimed is:
 1. A manufacturing method of an LED module,comprising: forming an insulating film on a substrate; forming a firstground pad and a second ground pad separated from each other on theinsulating film; forming a first division film that fills a spacebetween the first and second ground pads, a second division filmdeposited on a surface of the first ground pad, and a third divisionfilm deposited on a surface of the second ground pad; forming a firstpartition layer of a predetermined height on each of the division films;sputtering seed metal to the substrate on which the first partitionlayer is formed; forming a second partition layer of a predeterminedheight on the first partition layer; forming a first mirror connectedwith the first ground pad and a second mirror connected with the secondground pad by performing a metal plating process to the substrate onwhich the second partition layer is formed; removing the first andsecond partition layers; connecting a zener diode to the first mirrorand connecting an LED to the second mirror; and depositing a fluorescentmaterial so as to fill a space formed by the first mirror and the secondmirror.
 2. The manufacturing method of claim 1, wherein forming a firstpartition layer comprises: depositing a first photoresist layer on thesubstrate on which the division films are formed; and etching the firstphotoresist layer so as to expose a part of the first and second groundpads.
 3. The manufacturing method of claim 1, wherein forming a secondpartition layer comprises covering an entire upper surface of the firstpartition layer formed on the first division film by the secondpartition layer.
 4. The manufacturing method of claim 1, wherein forminga second partition layer comprises exposing a part of an upper surfaceof the first partition layer formed on the second and third divisionfilms by the second partition layer.
 5. The manufacturing method ofclaim 1, wherein forming a second partition layer comprises: depositinga second photoresist layer on the substrate to which seed metal issputtered; and etching the second photoresist layer so as to expose apart of the first and second ground pads and cover an entire uppersurface of the first partition layer formed on the first division filmby the second photoresist layer.
 6. The manufacturing method of claim 1,wherein forming an insulating film comprises; forming an anodic aluminumoxide (AAO) layer on the substrate; and depositing a silicon oxide(SiO₂) layer on an upper surface of the anodic aluminum oxide layer. 7.The manufacturing method of claim 1, wherein forming a first ground padand a second ground pad comprises: sputtering seed metal to theinsulating film; and performing a photo process and a metal platingprocess for manufacturing the first and second ground pads.
 8. Themanufacturing method of claim 7, wherein Ti or Au is used as the seedmetal and Cu or Au is used for the metal plating process.
 9. Themanufacturing method of claim 1, wherein the first to third divisionfilms are formed by coating the first and second ground pads by apolymer.
 10. The manufacturing method of claim 1, wherein the first tosecond mirrors are formed by performing an electroplating process to thesubstrate, on which the second partition layer is formed, with at leastone or more of Ni, Su, Cu, Au and Ag.
 11. A manufacturing method of anLED module, comprising: inserting a zener diode into a substrate;forming an insulating film on the substrate; forming a first ground padand a second ground pad separated from each other on the insulatingfilm; forming a first division film that fills a space between the firstand second ground pads, a second division film deposited on a surface ofthe first ground pad, and a third division film deposited on a surfaceof the second ground pad; forming a first partition layer of apredetermined height on each of the division films; sputtering seedmetal to the substrate on which the first partition layer is formed;forming a second partition layer of a predetermined height on the firstpartition layer; forming a first mirror connected with the first groundpad and a second mirror connected with the second ground pad byperforming a metal plating process to the substrate on which the secondpartition layer is formed; removing the first and second partitionlayers; connecting an LED to the second mirror; and depositing afluorescent material so as to fill a space formed by the first mirrorand the second mirror.
 12. The manufacturing method of claim 11, whereinthe inserted zener diode is positioned under the first mirror.
 13. Themanufacturing method of claim 11, wherein forming a first partitionlayer comprises: depositing a first photoresist layer on the substrateon which the division films are formed; and etching the firstphotoresist layer so as to expose a part of the first and second groundpads, and forming a second partition layer comprises: depositing asecond photoresist layer on the substrate to which seed metal issputtered; and etching the second photoresist layer so as to expose apart of the first and second ground pads, cover an entire upper surfaceof the first partition layer formed on the first division film by thesecond photoresist layer, and expose a part of an upper surface of thefirst partition layer formed on the second and third division films bythe second partition layer.
 14. The manufacturing method of claim 11,wherein forming an insulating film comprises: forming an anodic aluminumoxide (AAO) layer on the substrate; and depositing a silicon oxide(SiO₂) layer on an upper surface of the anodic aluminum oxide layer, andforming a first ground pad and a second ground pad comprises: sputteringseed metal such as Ti or Au to the insulating film; and performing aphoto process and a metal plating process using Cu or Au formanufacturing the first and second ground pads.
 15. The manufacturingmethod of claim 11, wherein the first to third division films are formedby coating the first and second ground pads by a polymer, and the firstto second mirrors are formed by performing an electroplating process tothe substrate, on which the second partition layer is formed, with atleast one or more of Ni, Su, Cu, Au and Ag.
 16. The manufacturing methodof claim 1, further comprising: connecting a driver IC (IntegratedCircuit) with the insulating film.
 17. The manufacturing method of claim1, further comprising: connecting an integrated passive device with theinsulating film.
 18. The manufacturing method of claim 11, furthercomprising: connecting a driver IC (Integrated Circuit) with theinsulating film.
 19. The manufacturing method of claim 11, furthercomprising: connecting an integrated passive device with the insulatingfilm.
 20. The manufacturing method of claim 16, further comprising:connecting an integrated passive device with the insulating film.